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Transistors with built-in Resistor UNR921xJ Series (UN921xJ Series) Silicon NPN epitaxial planar type Unit: mm 1.60+0.05 -0.03 1.000.05 0.800.05 For digital circuits Features * Costs can be reduced through downsizing of the equipment and reduction of the number of parts. * SS-Mini type package, allowing automatic insertion through tape packing. 0.12+0.03 -0.01 3 1.600.05 0.85+0.05 -0.03 1 0.270.02 2 (0.50)(0.50) Marking Symbol (R1) * UNR9210J (UN9210J) 8L 47 k * UNR9211J (UN9211J) 8A 10 k * UNR9212J (UN9212J) 8B 22 k * UNR9213J (UN9213J) 8C 47 k * UNR9214J (UN9214J) 8D 10 k * UNR9215J (UN9215J) 8E 10 k * UNR9216J (UN9216J) 8F 4.7 k * UNR9217J (UN9217J) 8H 22 k * UNR9218J (UN9218J) 8I 0.51 k * UNR9219J (UN9219J) 8K 1 k * UNR921AJ 8X 100 k * UNR921BJ 8Y 100 k * UNR921CJ 8Z * UNR921DJ (UN921DJ) 8M 47 k * UNR921EJ (UN921EJ) 8N 47 k * UNR921FJ (UN921FJ) 8O 4.7 k * UNR921KJ (UN921KJ) 8P 10 k * UNR921LJ (UN921LJ) 8Q 4.7 k * UNR921MJ EL 2.2 k * UNR921NJ EX 4.7 k * UNR921TJ (UN921TJ) EZ 22 k * UNR921VJ FD 2.2 k (R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 100 k 47 k 10 k 22 k 10 k 4.7 k 4.7 k 47 k 47 k 47 k 2.2 k 5 0.70+0.05 -0.03 Resistance by Part Number 0 to 0.02 (0.80) 5 1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package Internal Connection R1 B R2 E C Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 125 125 -55 to +125 Unit V V mA mW C C Note) The part numbers in the parenthesis show conventional part number. Publication date: January 2004 SJH00039BED 0.10 max. (0.375) 1 UNR921xJ Series Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cut-off current (Emitter open) Collector-emitter cut-off current (Base open) Emitterbase cut-off UNR9210J/9215J/ 9216J/9217J/921BJ UNR9213J/921AJ Symbol VCBO VCEO ICBO ICEO IEBO Transistors with built-in Resistor Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 Min 50 50 Typ Max Unit V V A A mA 0.1 0.5 0.01 0.1 0.2 0.5 1.0 1.5 2.0 current UNR9212J/9214J/921DJ/ (Collector 921EJ/921MJ/921NJ/921TJ open) UNR9211J UNR921FJ/921KJ UNR9219J UNR9218J/921CJ/921LJ/921VJ Forward current transfer ratio UNR921VJ UNR9218J/921KJ/921LJ UNR9219J/921DJ/921FJ UNR9211J UNR9212J/921EJ UNR9213J/9214J/921AJ/ 921CJ/921MJ UNR921NJ/921TJ UNR9210J/9215J/9216J/ 9217J/921BJ Collector-emitter saturation voltage Output voltage high-level Output voltage low-level UNR9213J/921BJ/921KJ UNR921DJ UNR921EJ UNR921AJ Transition frequency Input UNR9218J fT R1 VCE(sat) VOH VOL IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k VCC = 5 V, VB = 3.5 V, RL = 1 k VCC = 5 V, VB = 10 V, RL = 1 k VCC = 5 V, VB = 6 V, RL = 1 k VCC = 5 V, VB = 5 V, RL = 1 k VCB = 10 V, IE = -2 mA, f = 200 MHz -30% 150 0.51 1 2.2 4.7 10 22 47 100 4.9 hFE VCE = 10 V, IC = 5 mA 6 20 30 35 60 80 80 160 20 400 460 0.25 V V 0.2 V MHz +30% k resistance UNR9219J UNR921MJ/921VJ UNR9216J/921FJ/921LJ/921NJ UNR9211J/9214J/9215J/921KJ UNR9212J/9217J/921TJ UNR9210J/9213J/921DJ/921EJ UNR921AJ/921BJ 2 SJH00039BED Transistors with built-in Resistor Electrical Characteristics (continued) Ta = 25C 3C Parameter Emitter-base resistance UNR921CJ Rasistance UNR921MJ ratio UNR921NJ UNR9218J/9219J UNR9214J UNR921TJ UNR921FJ UNR921AJ/921VJ UNR9211J/9212J/9213J/921LJ UNR921KJ UNR921EJ UNR921DJ 0.8 1.70 1.70 3.7 0.37 0.08 0.17 Symbol R2 R1/R2 Conditions Min UNR921xJ Series Typ 47 0.047 0.1 0.10 0.21 0.47 0.47 1.0 1.0 2.13 2.14 4.7 Max +30% Unit k -30% 0.12 0.25 0.57 1.2 2.60 2.60 5.7 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta 150 Total power dissipation PT (mW) 125 100 75 50 25 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of UNR9210J IC VCE Collector-emitter saturation voltage VCE(sat) (V) 60 IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C 102 VCE(sat) IC IC / IB = 10 hFE IC 400 VCE = 10 V Forward current transfer ratio hFE 50 Collector current IC (mA) 10 300 Ta = 75C 25C 200 -25C 100 40 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA 30 0.3 mA 1 Ta = 75C 25C 10 -1 -25C 10 -2 10 -1 20 10 0 0 2 4 6 8 10 12 0 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00039BED 3 UNR921xJ Series Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C 104 Transistors with built-in Resistor IO VIN VO = 5 V Ta = 25C VIN IO 102 VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 3 102 Input voltage VIN (V) 103 10 1 2 10 10 -1 1 0 10 -1 1 10 102 1 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR9211J IC VCE Collector-emitter saturation voltage VCE(sat) (V) 160 IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C VCE(sat) IC 102 IC / IB = 10 400 hFE IC VCE = 10 V Collector current IC (mA) 120 0.7 mA 0.6 mA 0.5 mA 0.4 mA 10 Forward current transfer ratio hFE 300 Ta = 75C 80 0.3 mA 1 25C 10 -1 -25C 200 25C 100 -25C 0.2 mA 40 Ta = 75C 0.1 mA 0 0 2 4 6 8 10 12 10 -2 10 -1 1 10 102 0 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C 104 IO VIN VO = 5 V Ta = 25C VIN IO 102 VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 3 102 Input voltage VIN (V) 103 10 1 2 10 10 -1 1 0 10 -1 1 10 102 1 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 SJH00039BED Transistors with built-in Resistor Characteristics charts of UNR9212J IC VCE Collector-emitter saturation voltage VCE(sat) (V) 160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA UNR921xJ Series VCE(sat) IC 102 IC / IB = 10 400 hFE IC VCE = 10 V Collector current IC (mA) 120 0.7 mA 0.6 mA 0.5 mA 0.4 mA 10 Forward current transfer ratio hFE 300 Ta = 75C 80 0.3 mA 1 Ta = 75C 200 25C -25C 25C 10 -1 -25C 40 0.2 mA 100 0.1 mA 0 0 2 4 6 8 10 12 10 -2 10 -1 1 10 102 0 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C 104 IO VIN VO = 5 V Ta = 25C VIN IO 102 VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 3 102 Input voltage VIN (V) 103 10 1 2 10 10 -1 1 0 10 -1 1 10 102 1 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR9213J IC VCE Collector-emitter saturation voltage VCE(sat) (V) 160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA VCE(sat) IC 102 IC / IB = 10 400 hFE IC VCE = 10 V Forward current transfer ratio hFE Collector current IC (mA) 120 10 300 Ta = 75C 25C -25C 1 200 40 0.2 mA 25C 10 -1 -25C 10 -2 10 -1 Ta = 75C 100 0.1 mA 0 0 2 4 6 8 10 12 1 10 102 0 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00039BED 5 UNR921xJ Series Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C Transistors with built-in Resistor IO VIN 104 VO = 5 V Ta = 25C 102 VIN IO VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) 103 10 3 102 1 2 10 10 -1 1 0 10 -1 1 10 102 1 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR9214J IC VCE Collector-emitter saturation voltage VCE(sat) (V) 160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 80 0.4 mA 0.3 mA 40 102 VCE(sat) IC IC / IB = 10 400 hFE IC VCE = 10 V 120 Forward current transfer ratio hFE Collector current IC (mA) 10 300 Ta = 75C 200 25C -25C 100 1 Ta = 75C 10 -2 -25C 10 -1 10 -1 1 10 102 25C 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12 0 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C 104 IO VIN VO = 5 V Ta = 25C VIN IO 102 VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 3 Input voltage VIN (V) 103 10 102 1 2 10 10 -1 1 0 10 -1 1 10 102 1 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 6 SJH00039BED Transistors with built-in Resistor Characteristics charts of UNR9215J IC VCE Collector-emitter saturation voltage VCE(sat) (V) 160 IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C 102 UNR921xJ Series VCE(sat) IC IC / IB = 10 hFE IC 400 VCE = 10 V Forward current transfer ratio hFE Collector current IC (mA) 120 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA 10 300 Ta = 75C 80 1 200 25C -25C 100 Ta = 75C 10 -1 -25C 10 -2 40 25C 0 0 2 4 6 8 10 12 10 -1 0 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C 104 IO VIN VO = 5 V Ta = 25C VIN IO 102 VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 3 102 Input voltage VIN (V) 103 10 1 2 10 10 -1 1 0 10 -1 1 10 102 1 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR9216J IC VCE Collector-emitter saturation voltage VCE(sat) (V) 160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 102 VCE(sat) IC IC / IB = 10 hFE IC 400 VCE = 10 V 120 Forward current transfer ratio hFE Ta = 75C 300 25C -25C 200 Collector current IC (mA) 10 80 1 Ta = 75C 10 -1 25C 40 100 0.1 mA 0 0 2 4 6 8 10 12 -25C 10 -2 10 -1 0 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00039BED 7 UNR921xJ Series Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C 104 Transistors with built-in Resistor IO VIN VO = 5 V Ta = 25C 102 VIN IO VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 3 102 Input voltage VIN (V) 103 10 1 2 10 10 -1 1 0 10 -1 1 10 102 1 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR9217J IC VCE a IB =1 .0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA VCE(sat) IC T = 25C hFE IC 400 VCE = 10 V 10 Forward current transfer ratio hFE 100 Collector-emitter saturation voltage VCE(sat) (V) 120 102 IC / IB = 10 Collector current IC (mA) 300 80 0.4 mA 0.3 mA 0.2 mA 60 1 Ta = 75C 200 Ta = 75C 25C 40 25C 10 -1 100 -25C 20 0 0 2 4 6 8 0.1 mA -25C 10 -2 10 -1 1 10 102 0 1 10 102 103 10 12 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C 104 IO VIN VO = 5 V Ta = 25C VIN IO 102 VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 3 102 Input voltage VIN (V) 103 10 1 2 10 10 -1 1 0 10 -1 1 10 102 1 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 - -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 8 SJH00039BED Transistors with built-in Resistor Characteristics charts of UNR9218J IC VCE Ta = 25C UNR921xJ Series VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 102 IC / IB = 10 hFE IC 160 VCE = 10 V 240 160 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 10 Forward current transfer ratio hFE 200 Collector current IC (mA) 120 Ta = 75C 80 25C -25C 40 120 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0 0.1 mA 0 2 4 6 8 10 12 1 Ta = 75C 80 10 -1 25C 40 10 -2 10 -1 -25C 1 10 102 0 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C 104 IO VIN VO = 5 V Ta = 25C VIN IO 102 VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 3 Input voltage VIN (V) 103 10 102 1 2 10 10 -1 1 0 10 -1 1 10 102 1 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR9219J IC VCE Collector-emitter saturation voltage VCE(sat) (V) 240 102 VCE(sat) IC Ta = 25C IC / IB = 10 160 hFE IC VCE = 10 V Collector current IC (mA) 160 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 10 Forward current transfer ratio hFE 200 120 120 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12 1 Ta = 75C 10 -1 25C 80 Ta = 75C 25C -25C 80 40 40 -25C 10 -2 10 -1 0 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00039BED 9 UNR921xJ Series Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C Transistors with built-in Resistor IO VIN 104 VO = 5 V Ta = 25C 102 VIN IO VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) 103 10 3 102 1 2 10 10 -1 1 10 -2 10 -1 0 10 -1 1 10 102 1 0.4 0.6 0.8 1.0 1.2 1.4 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR921AJ IC VCE Collector-emitter saturation voltage VCE(sat) (V) Ta = 25C 120 IB = 0.5 mA 0.4 mA 0.3 mA 80 0.2 mA 40 0.1 mA 1 VCE(sat) IC IC / IB = 10 400 VCE = 10 V hFE IC Ta = 75C Forward current transfer ratio hFE Collector current IC (mA) 300 25C -25C 10 -1 Ta = 75C 200 25C -25C 100 0 0 2 4 6 8 10 10 -2 10 -1 1 10 102 0 10 -1 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 10 f = 1 MHz Ta = 25C 10 IO VIN VO = 5 V Ta = 25C 102 VIN IO VO = 0.2 V Ta = 25C Output current IO (mA) 1 Input voltage VIN (V) 10 10 -1 1 10 -2 0 10 20 0 1 2 3 1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 10 SJH00039BED Transistors with built-in Resistor Characteristics charts of UNR921BJ IC VCE Collector-emitter saturation voltage VCE(sat) (V) 120 Ta = 25C IB = 0.5 mA 100 UNR921xJ Series VCE(sat) IC 10 IC / IB = 10 400 hFE IC VCE = 10 V Ta = 75C 25C 300 -25C 200 0.4 mA 80 0.3 mA 1 60 0.2 mA 40 0.1 mA 20 10 -1 25C Ta = 75C Forward current transfer ratio hFE Collector current IC (mA) 100 -25C 10 -2 10 -1 0 0 0 2 4 6 8 10 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 10 f = 1 MHz Ta = 25C IO VIN 10 VO = 5 V Ta = 25C 102 VIN IO VO = 0.2 V Ta = 25C Output current IO (mA) Input voltage VIN (V) 10 1 1 1 0 10 20 30 40 Collector-base voltage VCB (V) 10 -1 0.4 0.8 1.2 1.6 10 -1 10 -1 1 10 102 Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR921CJ IC VCE Collector-emitter saturation voltage VCE(sat) (V) IB = 1.0 mA 120 Ta = 25C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 1 VCE(sat) IC IC / IB = 10 300 hFE IC VCE = 10 V Forward current transfer ratio hFE Ta = 75C 25C Collector current IC (mA) 80 200 10 -1 25C Ta = 75C -25C 0.2 mA 40 0.1 mA 100 -25C 0 0 2 4 6 8 10 10 -2 1 0 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00039BED 11 UNR921xJ Series Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 102 f = 1 MHz Ta = 25C Transistors with built-in Resistor IO VIN 102 10 VIN IO VO = 0.2 V Ta = 25C VO = 5 V Ta = 25C Output current IO (mA) 10 Input voltage VIN (V) 10 1 1 1 0 10 20 30 40 10 -1 0 0.4 0.8 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR921DJ IC VCE Ta = 25C 0.9 mA 0.8 mA 0.5 mA 0.4 mA 0.7 mA 25 0.3 mA 0.6 mA IB = 1.0 mA 20 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 102 IC / IB = 10 hFE IC 160 VCE = 10 V Ta = 75C 25C -25C 30 Forward current transfer ratio hFE Collector current IC (mA) 10 120 15 0.2 mA 10 0.1 mA 1 80 10 -1 25C Ta = 75C 40 5 -25C 10 -2 10 -1 0 0 1 10 102 0 2 4 6 8 10 12 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C 104 IO VIN VO = 5 V Ta = 25C 102 VIN IO VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) 103 10 3 102 1 2 10 10 -1 1 10 -2 10 -1 0 10 -1 1 10 102 1 1.5 2.0 2.5 3.0 3.5 4.0 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 12 SJH00039BED Transistors with built-in Resistor Characteristics charts of UNR921EJ IC VCE Collector-emitter saturation voltage VCE(sat) (V) 60 IB = 1.0 mA 0.7 mA Ta = 25C 0.9 mA 0.6 mA 0.8 mA UNR921xJ Series VCE(sat) IC 102 IC / IB = 10 160 hFE IC VCE = 10 V Forward current transfer ratio hFE 50 Collector current IC (mA) 10 120 Ta = 75C 25C -25C 40 0.3 mA 0.2 mA 0.4 mA 0.5 mA 0.1 mA 30 1 Ta = 75C 25C 80 20 10 -1 40 10 -25C 10 -2 10 -1 0 0 0 2 4 6 8 10 12 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1MHz IE = 0 Ta = 25C 104 IO VIN VO = 5 V Ta = 25C 102 VIN IO VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 3 102 Input voltage VIN (V) 103 10 1 2 10 10 -1 1 0 10 -1 1 10 102 1 1.5 2.0 2.5 3.0 3.5 4.0 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR921FJ IC VCE Collector-emitter saturation voltage VCE(sat) (V) 240 Ta = 25C 102 VCE(sat) IC IC / IB = 10 hFE IC 160 VCE = 10 V Forward current transfer ratio hFE 200 Collector current IC (mA) 160 0.9 mA 0.8 mA 0.7 mA 0.6 mA IB = 1.0 mA 0.5 mA 0.4 mA 0.3 mA 10 120 Ta = 75C 80 25C -25C 120 1 Ta = 75C 80 25C 10 -1 40 40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12 -25C 10 -2 10 -1 0 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00039BED 13 UNR921xJ Series Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C 104 Transistors with built-in Resistor IO VIN VO = 5 V Ta = 25C VIN IO 102 VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 3 102 Input voltage VIN (V) 103 10 1 2 10 10 -1 1 0 10 -1 1 10 102 1 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR921KJ IC VCE Collector-emitter saturation voltage VCE(sat) (V) 240 VCE(sat) IC 102 Ta = 25C hFE IC 240 VCE = 10 V IC / IB = 10 200 Collector current IC (mA) 10 Forward current transfer ratio hFE 200 160 IB = 1.2 mA 1.0 mA 0.8 mA 80 0.6 mA 0.4 mA 0.2 mA 0 0 2 4 6 8 10 12 160 Ta = 75C 120 25C 80 120 1 10 -1 25C Ta = 75C -25C 40 -25C 40 10 -2 1 0 10 102 103 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C 102 VIN IO VO = 0.2 V Ta = 25C 5 4 3 Input voltage VIN (V) 1 10 102 10 1 2 10 -1 1 0 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Output current IO (mA) 14 SJH00039BED Transistors with built-in Resistor Characteristics charts of UNR921LJ IC VCE Collector-emitter saturation voltage VCE(sat) (V) 240 Ta = 25C UNR921xJ Series VCE(sat) IC 102 IC / IB = 10 240 hFE IC VCE = 10 V 200 10 Forward current transfer ratio hFE 200 Ta = 75C Collector current IC (mA) 160 IB = 1.0 mA 120 0.8 mA 0.6 mA 80 0.4 mA 160 1 Ta = 75C 10 -1 25C -25C 10 -2 1 10 120 25C -25C 80 40 0.2 mA 0 40 0 2 4 6 8 10 12 102 103 0 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C VIN IO 102 VO = 0.2 V Ta = 25C 5 4 3 Input voltage VIN (V) 1 10 102 10 1 2 10 -1 1 0 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR921MJ IC VCE Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 10 hFE IC 500 VCE = 10 V 240 IC / IB = 10 Forward current transfer ratio hFE 200 400 Collector current IC (mA) 1 160 Ta = 75C 10 -1 25C 300 Ta = 75C 25C 120 0.5 mA 0.4 mA 0.3 mA 0.2 mA 200 80 -25C 10 -2 -25C 40 0.1 mA 100 0 10 -3 0 2 4 6 8 10 12 1 10 102 103 0 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00039BED 15 UNR921xJ Series Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 5 f = 1 MHz IE = 0 Ta = 25C 4 104 Transistors with built-in Resistor IO VIN VO = 5 V Ta = 25C 102 VIN IO VO = 0.2 V Ta = 25C Output current IO (A) 103 10 3 102 Input voltage VIN (V) 1 2 10 10 -1 1 0 10 -1 1 10 102 1 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR921NJ IC VCE Collector-emitter saturation voltage VCE(sat) (V) 160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 40 0.1 mA 10 VCE(sat) IC IC / IB = 10 480 hFE IC VCE = 10 V 120 Forward current transfer ratio hFE 400 Ta = 75C Collector current IC (mA) 1 320 25C 240 80 10 -1 Ta = 75C 25C -25C 160 -25C 80 0 0 2 4 6 8 10 12 10 -2 1 10 102 103 0 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C 104 IO VIN VO = 5 V Ta = 25C VIN IO 102 VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) 103 10 3 102 1 2 10 10 -1 1 10 -2 10 -1 0 1 10 102 1 0.4 0.6 0.8 1.0 1.2 1.4 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 16 SJH00039BED Transistors with built-in Resistor Characteristics charts of UNR921TJ IC VCE 160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA UNR921xJ Series VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (mV) 103 IC / IB = 10 hFE IC 400 VCE = 10 V Ta = 75C 300 25C 120 Ta = 75C 102 25C -25C 80 Forward current transfer ratio hFE Collector current IC (mA) 200 -25C 40 0.1 mA 100 0 0 2 4 6 8 10 10 1 10 102 0 10 -1 1 10 102 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 4 102 IO VIN VO = 5 V Ta = 25C 102 VIN IO VO = 0.2 V Ta = 25C Output current IO (mA) Input voltage VIN (V) 3 10 10 1 2 10 -1 1 1 10 -2 0 1 10 102 10 -3 0.25 0.75 1.25 10 -1 10 -3 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR921VJ IC VCE Collector-emitter saturation voltage VCE(sat) (V) 160 Ta = 25C 10 VCE(sat) IC IC / IB = 10 hFE IC 240 VCE = 10 V 120 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 1 Forward current transfer ratio hFE 200 Collector current IC (mA) 160 Ta = 75C 120 25C 80 -25C 80 0.6 mA 0.5 mA 10 -1 Ta = 75C 25C 40 0.4 mA 0.3 mA 0.2 mA 0 2 4 6 8 10 12 -25C 10 -2 1 40 0 0 10 102 103 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00039BED 17 UNR921xJ Series Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25C 104 Transistors with built-in Resistor IO VIN 102 VIN IO VO = 5 V Ta = 25C 10 VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) 103 3 102 1 2 10 1 10 -1 0 1 10 102 1 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 -1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 18 SJH00039BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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